VESD05A4A-HS4 document number 81786 rev. 1.4, 02-mar-10 vishay semiconductors www.vishay.com 1 20 8 96 20 8 97 1 5 4 2 3 6 for technical support, please contact: esdprotection@vishay.com 4-line (quad) esd protection diode array in llp1010-6l features ? ultra compact llp1010-6l package ? low package height < 0.4 mm ? 4-line esd protection (quad) ? low leakage current < 0.1 a ? low load capacitance c d = 12 pf ? esd-protection acc. iec 61000-4-2 15 kv contact discharge 17 kv air discharge ? surge current acc. iec 6100-4-5 i pp > 2.5 a ? soldering can be checked by standard vision inspection. no x-ray necessary ? pin plating nipdau (e4) no whisker growth ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec marking (example only) dot = pin 1 marking x = date code y = type code (see table below) ordering information package data ** please see document ?vishay material category policy?: www.vishay.com/doc?99902 20932 xy device name ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity VESD05A4A-HS4 VESD05A4A-HS4-gs08 5000 5000 device name package name type code weight molding compound flammability rating moisture sensitivity level soldering conditions VESD05A4A-HS4 llp1010-6l a 1.07 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals
www.vishay.com 2 document number 81786 rev. 1.4, 02-mar-10 VESD05A4A-HS4 vishay semiconductors for technical support, please contact: esdprotection@vishay.com absolute maximum ratings bias -mode (4-line bi directional as ymmetrical protection mode) with the VESD05A4A-HS4 up to 4 signal- or data-lines (l1 to l4) can be protected against voltage transients. with pin 2 and 6 connected to ground and pin 1, 3, 4 and 5 connected to a signal- or data-line which has to be protected. as long as the voltage level on the data- or signal-line is between 0 v (ground level) and the specified m aximum r everse w orking v oltage ( v rwm ) the protection diode between data line and ground offer a high isolation to the ground line. the protection device behaves like an open switch. as soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the tr ansient current to ground. now the protection device behaves like a closed switch. the c lamping v oltage ( v c ) is defined by the br eakthrough v oltage ( v br ) level plus the voltage drop at the series impedance (res istance and inductance) of the protection device. any negative transient signal will be clamped accordingly. t he negative transient curr ent is flowing in the forward direction of the protection diode. the low f orward v oltage ( v f ) clamps the negative transient close to the ground level. due to the different clamping levels in forward and reverse direction the VESD05A4A-HS4 clamping behaviour is bi directional and as ymmetrical ( bias ). rating test conditions symbol value unit peak pulse current bias-mode: each input (pin 1, 3 to 5) to ground (pin 2 and 6); acc. iec 61000-4-5; t p = 8/20 s; single shot i ppm 2.5 a bisy-mode: each input (pin 1, 3 to 5) to any other input pin. pin 2 and 6 not connected. acc. iec 61000-4-5; t p = 8/20 s; single shot i ppm 2.5 a peak pulse power bias-mode: each input (pin 1, 3 to 5) to ground (pin 2 and 6); acc. iec 61000-4-5; t p = 8/20 s; single shot p pp 30 w bisy-mode: each input (pin 1, 3 to 5) to any other input pin. pin 2 and 6 not connected. acc. iec 61000-4-5; t p = 8/20 s; single shot p pp 33 w esd immunity acc. iec61000-4-2; 10 pulses bias-mode: each input (pin 1, 3 to 5) to ground (pin 2 and 6) contact discharge v esd 15 kv air discharge v esd 17 kv acc. iec 61000-4-2 ; 10 pulses bisy-mode: each input (pin 1, 3 to 5) to any other input pin. pin 2 and 6 not connected. contact discharge v esd 15 kv air discharge v esd 17 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c 20 8 9 8 l4 l1 1 5 4 2 3 6 l3 l2
VESD05A4A-HS4 document number 81786 rev. 1.4, 02-mar-10 vishay semiconductors www.vishay.com 3 for technical support, please contact: esdprotection@vishay.com electrical characteristics ratings at 25 c, ambient temperature unless otherwise specified VESD05A4A-HS4 bias mode: each input (pin 1, 3, 4 and 5) to ground (pin 2 and/or 6) if a higher surge current or peak pulse current (i pp ) is needed, some protection diodes in the VESD05A4A-HS4 can also be used in parallel in order to "multiply" the performance. if two diodes are switched in parallel you get ? double surge power = double peak pulse current (2 x i ppm ) ? half of the line inductance = reduced clamping voltage ? half of the line resistance = reduced clamping voltage ? double line capacitance (2 x c d ) ? double reverse leakage current (2 x i r ) parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of line which can be protected n lines 4 lines reverse stand-off voltage at i r = 0.1 a v rwm 5v reverse current at v r = v rwm = 5 v i r < 0.01 0.1 a reverse breakdown voltage at i r = 1 ma v br 68v clamping voltage at i pp = 2.5 a acc. iec 61000-4-5 v c 12 v forward clamping voltage at i f = 2.5 a acc. iec 61000-4-5 v f 2.5 v capacitance at v r = 0 v; f = 1 mhz c d 12 15 pf at v r = 2.5 v; f = 1 mhz c d 7.5 8.5 pf l1 l2 20900 1 5 4 2 3 6
www.vishay.com 4 document number 81786 rev. 1.4, 02-mar-10 VESD05A4A-HS4 vishay semiconductors for technical support, please contact: esdprotection@vishay.com bisy -mode (3-line bi directional sy mmetrical protection mode) if a bipolar symmetrical protection device is needed the VESD05A4A-HS4 can also be used as a three-line protection device. therefore three pins (example: pin 1, 3, and 5) has to be connected to the signal- or data- line (l1 to l3) and pin 3 to ground. pin 2 and 6 must not be connected! positive and negative volt age transients will be clamped in the same way. the clam ping current from one data line through the VESD05A4A-HS4 to the ground passes one diode in forward direction and the other one in reverse direction. the c lamping v oltage ( v c ) is defined by the br eakthrough v oltage ( v br ) level of one diode plus the forward voltage of the other diode plus the vo ltage drop at the series impedances (resistances and inductances) of the protection device. due to the same clamping levels in positive and negative direction the VESD05A4A-HS4 voltage clamping behaviour is also bi directional and sy mmetrical ( bisy ). electrical characteristics ratings at 25 c, ambient temperature unless otherwise specified VESD05A4A-HS4 bisy mode: each input (pin 1, 3, 4 or 5) to any other input pin connected to ground; pin 2 and 6 not connected parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of line which can be protected n lines 3lines reverse stand-off voltage at i r = 0.1 a v rwm 5.5 v reverse current at v r = v rwm = 5.5 v i r < 0.01 0.1 a reverse breakdown voltage at i r = 1 ma v br 6.5 8.7 v clamping voltage at i pp = 2.5 a acc. iec 61000-4-5 v c 11.5 13 v capacitance at v r = 0 v; f = 1 mhz c d 68pf at v r = 2.5 v; f = 1 mhz c d 57pf 20901 l1 l2 1 5 4 2 3 6 l3
VESD05A4A-HS4 document number 81786 rev. 1.4, 02-mar-10 vishay semiconductors www.vishay.com 5 for technical support, please contact: esdprotection@vishay.com typical characteristics (t amb = 25 c, unless otherwise specified) figure 1. 8/20 s peak pulse current wave form acc. iec 61000-4-5 figure 2. esd discharge current wave form acc. iec 61000-4-2 (330 /150 pf) figure 3. typical capacitance c d vs. reverse voltage v r 0 % 20 % 40 % 60 % 8 0 % 100 % 010203040 time ( s) i ppm 20 s to 50 % 8 s to 100 % 2054 8 0 % 20 % 40 % 60 % 8 0 % 100 % 120 % - 10 0 10 20 30 40 50 60 70 8 0 90 100 time (ns) discharge c u rrent i esd rise time = 0.7 ns to 1 ns 53 % 27 % 20557 0 2 4 6 8 10 12 14 0123456 f = 1 mhz bias-mode bisy-mode v r ( v ) c d (pf) 20 888 figure 4. typical forward current i f vs. forward voltage v f figure 5. typical reverse voltage v r vs. reverse current i r figure 6. typical peak clamping voltage v c vs. peak pulse current i pp 0.001 0.01 0.1 1 10 100 0.5 0.6 0.7 0. 8 0.9 1 v f ( v ) i f (ma) 20 88 9 0 1 2 3 4 5 6 7 8 0.01 0.1 1 10 100 1000 10000 i r ( a) v r ( v ) 20 8 90 - 15 - 10 - 5 0 5 10 15 0123 v c positi v e s u rge negati v e s u rge bisy-mode meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v e form) i pp (a) v c ( v ) 20 8 91
www.vishay.com 6 document number 81786 rev. 1.4, 02-mar-10 VESD05A4A-HS4 vishay semiconductors for technical support, please contact: esdprotection@vishay.com figure 7. typical peak clamping voltagev c vs. peak pulse current i pp figure 8. typical clamping performance at + 8 kv contact discharge (acc. iec 61000-4-2) figure 9. typical clamping performance at - 8 kv contact discharge (acc. iec 61000-4-2) - 4 - 2 0 2 4 6 8 10 12 0123 bias-mode v c positi v e s u rge negati v e s u rge meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v e form) i pp (a) v c ( v ) 20 8 92 - 30 - 20 - 10 0 10 20 30 40 50 60 70 - 10 0 10 20 30 40 50 60 70 8 090 acc. iec 61000-4-2 + 8 k v contact discharge t (ns) v c-esd ( v ) 20 8 93 - 60 - 50 - 40 - 30 - 20 - 10 0 10 20 30 40 - 10 0 10 20 30 40 50 60 70 8 090 acc. iec 61000-4-2 - 8 k v contact discharge t (ns) v c-esd ( v ) 20 8 94 figure 10. typical peak clamping voltage at esd contact discharge (acc. iec 61000-4-2) - 150 - 100 - 50 0 50 100 150 0 5000 10000 15000 20000 acc. iec 61000-4-2 contact discharge v c-esd positi v e discharge negati v e discharge v esd (k v ) v c-esd ( v ) 20 8 95
VESD05A4A-HS4 document number 81786 rev. 1.4, 02-mar-10 vishay semiconductors www.vishay.com 7 for technical support, please contact: esdprotection@vishay.com package dimensions in millimeter s (inches): llp1010-6l solder resist mask solder pad 0.125 (0.005) ref. 0.03 (0.001) 0 (0.000) pin 1 marking 0.4 (0.016) 0.33 (0.013) 0.35 (0.014) b sc 0.7 (0.02 8 ) ref. 0.22 (0.009) exp. dap 0.2 (0.00 8 ) 0.1 (0.004) 0.5 (0.020) exp. dap 0.25 (0.010) 0.15 (0.006) 1.05 (0.041) 0.95 (0.037) 1.05 (0.041) 0.95 (0.037) soldermask opening 0.03 meas u red middle of the package 0.05 (0.002) 0.175 (0.007) 0.35 (0.014) 0.7 (0.02 8 ) 0.35 (0.014) 0.3 (0.012) 0.22 (0.009) 0.5 (0.020) foot print recommendation: 20 8 99 doc u ment no.:s 8 - v -3906.04-004 (4) re v . 4 - date: 09. sep. 200 8 created - date: 17.j u ly.2007
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